White Light Emission from RF-Sputtered BaWO₄:Dy³⁺ Thin Films

Radio frequency (RF)-sputtered white-light-emitting BaWO4:Dy3+ thin films were deposited at four different temperatures for application in electroluminescence devices and displays. All crystallized to achieve a tetragonal structure with dominant BaWO4 (112) diffraction peak, irrespective of growth temperature. Two types trapezoid grains average sizes approximately 250 530 nm evolved deposition temperature 100 °C. Upon 234 excitation, the two main emission spectra exhibited 572 yellow band arising from 4F9/2 → 6H13/2 transition 477 blue line resulting 6H15/2 Dy3+. As increased, intensities all bands increased slowly, approached maximum 300 °C, then decreased markedly 400 chromaticity coordinates (0.314, 0.361), gap 4.56 eV, transmittance 98%. These results indicate that white-light RF-sputtered can be fully realized by varying